Photon-stimulated desorption as a measure of surface electronic structure

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Abstract
The yield of ions desorbed via excitation of the Si 2p and F 1s levels was measured for fluorine adsorbed on Si(111). These photon-stimulated desorption (PSD) spectra were compared with the absorption measured via secondary or Auger electrons. It was seen that the PSD is dominated by direct excitations, and that the PSD spectra are sensitive to the final-state density at the local atomic site associated with the initial excitation. At the Si 2p edge, the PSD is sensitive to the oxidation state of the bonding silicon atom. At the F 1s edge, it is sensitive to the correspondence between the polarization vector of the incident light and the bond direction. Measurements of the kinetic energies of the desorbed ions were used to ascertain details of the desorption mechanism.

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