Energy Levels in Neutron-Irradiatedn-Type Silicon

Pulsed-field effect experiments have been performed on neutron-irradiated $n$-type silicon samples with the aim of detecting deep-lying radiation-induced energy levels and estimating their electron capture cross sections. These experiments provide evidence in favor of two, deep-lying states in the upper part of the energy gap, at 0.15 ev and 0.37 ev below the conduction band edge. The electron capture cross sections associated with these two levels strongly suggest that both are acceptor-like.