AlGaAs/GaAs Heterojunction bipolar power transistors
- 28 March 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (7) , 258-259
- https://doi.org/10.1049/el:19850183
Abstract
An AlGaAs/GaAs heterojunction bipolar transistor with a total emitter periphery of 320 μm has been developed for power amplifier applications. For the base contact, Zn diffusion was used to convert the n-type emitter material into p-type with a doping of ̃1.0 × 1020 cm−3. Because of the highly doped layer, contact resistivity was extremely low (5 × 10−7 Ωcm2). At 3 GHz, a CW output power of 320 mW with 7 dB gain and 30% power-added efficiency was obtained. Under pulsed operation, the output power increased to 500 mW with 6 dB gain and 40% power-added efficiency. With further device structure optimisations, the power performance of heterojunction bipolar transistors is expected to rival, or even surpass, that of the GaAs MESFETs.Keywords
This publication has 2 references indexed in Scilit:
- GaAs/AlGaAs heterojunction bipolar transistors with very low base sheet resistancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Microwave performance of GaAs/(Ga,Al)As heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984