Magnetic field elimination of convective interference with segregation during vertical-Bridgman growth of doped semiconductors
- 1 September 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 104 (4) , 833-850
- https://doi.org/10.1016/0022-0248(90)90109-x
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Interference of buoyancy-induced convection with segregation during directional solidification: Scaling lawsJournal of Crystal Growth, 1990
- Dopant segregation during vertical Bridgman-Stockbarger growth with melt stabilization by strong axial magnetic fieldsJournal of Crystal Growth, 1987
- Convection and segregation in directional solidification of dilute and non-dilute binary alloys: Effects of ampoule and furnace designJournal of Crystal Growth, 1987
- The effect of a magnetic field on transport phenomena in a Bridgman-Stockbarger crystal growthJournal of Crystal Growth, 1984
- Suppression of Thermal Convection by Transverse Magnetic FieldJournal of the Electrochemical Society, 1982
- Influence of magnetic field on vertical Bridgman-Stockbarger growth of InxGa1 − xSbJournal of Crystal Growth, 1978
- Czochralski-type crystal growth in transverse magnetic fieldsJournal of Materials Science, 1970
- Avoidance of Growth-striae in Semiconductor and Metal Crystals grown by Zone-melting TechniquesNature, 1966
- Elimination of Solute Banding in Indium Antimonide Crystals by Growth in a Magnetic FieldJournal of Applied Physics, 1966
- The redistribution of solute atoms during the solidification of metalsActa Metallurgica, 1953