Effects of Heat Treatment on Lead Telluride under Tellurium Pressure:–Carrier Concentration Dependence of Mobility and Etch Pits on Worked Surfaces–
- 1 November 1963
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 2 (11)
- https://doi.org/10.1143/jjap.2.688
Abstract
Single crystals of lead telluride having carrier concentrations from 8×1016to 6×1017/c.c. forn-type and from 1017to 6×1018/c.c. forp-type have been obtained with controlling tellurium pressure. Hall mobility of carriers depends on carrier concentration and has a maximum as a function of carrier concentration. Etch pits on crystal surfaces have been observed. Their density is 7×106/cm2before annealing and decreases to 4×106/cm2after annealing.Keywords
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