New empirical nonlinear model for HEMT devices

• 16 January 1992
• journal article
• Published by Institution of Engineering and Technology (IET) in Electronics Letters
• Vol. 28  (2) , 140-142
• https://doi.org/10.1049/el:19920087

Abstract

Keywords

• S-PARAMETERS
• HEMT DEVICES
• SUBMICROMETRE GATELENGTH
• LARGE SIGNAL MODEL
• PSEUDOMORPHIC HEMT
• SUBMICRON GATE
• CHARACTERISTIC TRANSCONDUCTANCE PEAK
• CURRENT-VOLTAGE CHARACTERISTIC
• NONLINEAR MODEL
• DELTA DOPED TYPE
• I/V CHARACTERISTICS
• MODEL PARAMETER EXTRACTION
• DC PARAMETERS