Diffusion of oxygen in silicon
- 1 October 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (10) , 7097-7098
- https://doi.org/10.1063/1.330017
Abstract
Recently reported measurements of oxygen diffusion in silicon agree within experimental accuracy with a previous estimate D=0.23 exp(−2.561±0.005 eV/kT) cm2 s−1, determined from a direct measurement at lower temperatures of the one-jump process for interstitial oxygen from one Si-Si bond to an adjacent one. The diffusion constant is therefore known over 11 decades and results from a single microscopically identified process. There are few such model textbook examples for diffusion in solids.This publication has 3 references indexed in Scilit:
- Diffusivity of oxygen in silicon during steam oxidationApplied Physics Letters, 1982
- The configuration and diffusion of isolated oxygen in silicon and germaniumJournal of Physics and Chemistry of Solids, 1964
- Internal Friction in Germanium and Silicon I: Electron and Impurity RelaxationProceedings of the Physical Society, 1960