Effect of strained InGaAs step bunching on mobility and device performance in n-InGaP/InGaAs/GaAs pseudomorphic heterostructures grown by metalorganic vapor phase epitaxy
- 1 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 799-807
- https://doi.org/10.1016/0022-0248(94)91145-2
Abstract
No abstract availableKeywords
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