STIMULATED EMISSION OF EXCITON RECOMBINATION RADIATION IN GaAs p-n JUNCTIONS
- 15 October 1963
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 3 (8) , 127-129
- https://doi.org/10.1063/1.1753898
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Evidence for the Role of Donor states in GaAs ElectroluminescencePhysical Review Letters, 1963
- Pair Spectra in GaPPhysical Review Letters, 1963
- Recombination Radiation in GaAsPhysical Review B, 1963
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Shallow Impurity States in Silicon and GermaniumPublished by Elsevier ,1957
- The Forward Characteristic of the Pin DiodeBell System Technical Journal, 1956