Effect of contact resistance on Gunn-diode risetimes
- 30 November 1972
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 8 (24) , 596-597
- https://doi.org/10.1049/el:19720432
Abstract
It is shown that the dominant mechanism limiting the risetime of pulsed Gunn-effect oscillators is a parasitic resistance within the device. If this resistance is reduced by careful control of the contact metallisation, or alternatively by the use of n+ contacts, risetimes of 1 ns or less can be obtained. The cavity parameters are shown to have a 2nd-order effect only.Keywords
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