Photoluminescence of Indirect-Band-Gap GaAs_1-xP_x(x=0.52) Implanted with Nitrogen Ions

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1 September 1974

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 13 (9) , 1483-1484
https://doi.org/10.1143/jjap.13.1483

Abstract

No abstract available

Cited by 10 articles