Effect of Strain and Interface Interdiffusion on the Valence Band Offset at Si/Ge Interfaces

Publisher Website

1 January 1989

journal article
Published by Springer Nature in MRS Proceedings

Vol. 148
https://doi.org/10.1557/proc-148-329

Abstract

No abstract available

Keywords

This publication has 8 references indexed in Scilit:

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Physical Review B, 1989
Structural and electronic properties of epitaxial thin-layer ${Si}_{n}$ ${Ge}_{n}$ superlattices
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