Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition
- 3 November 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (19) , 2918-2920
- https://doi.org/10.1063/1.125189
Abstract
Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted chemical-vapor deposition with a solid silicon and carbon source. The SiC nanowires show good field-emitting properties as revealed by the current–voltage characteristics. Together with its ease of preparation, these SiC nanowires are shown to have great potential in the area of electron field-emitting devices.Keywords
This publication has 15 references indexed in Scilit:
- Interactions of Carbon-Nanotubule Proximal Probe Tips with Diamond and GraphenePhysical Review Letters, 1998
- Spin Splitting and Even-Odd Effects in Carbon NanotubesPhysical Review Letters, 1998
- Fabrication of silicon nanowiresApplied Physics A, 1998
- Synthesis of boron nitride nanotubes by means of excimer laser ablation at high temperatureApplied Physics Letters, 1998
- A Laser Ablation Method for the Synthesis of Crystalline Semiconductor NanowiresScience, 1998
- Synthesis of silicon nitride nanorods using carbon nanotube as a templateApplied Physics Letters, 1997
- Elastic Properties of Carbon Nanotubes and NanoropesPhysical Review Letters, 1997
- Nonlinear Electron Transport Effects in a Chiral Carbon NanotubePhysical Review Letters, 1997
- Size, Shape, and Low Energy Electronic Structure of Carbon NanotubesPhysical Review Letters, 1997
- Helical microtubules of graphitic carbonNature, 1991