Photoluminescence of Cd1—xZnxTe Crystals Grown by High-Pressure Bridgman Technique
- 1 August 1997
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 162 (2) , 747-763
- https://doi.org/10.1002/1521-396x(199708)162:2<747::aid-pssa747>3.0.co;2-2
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?Journal of Applied Physics, 1997
- 1.4 eV photoluminescence in chlorine-doped polycrystalline CdTe with a high density of defectsJournal of Materials Science, 1997
- Deep electronic levels in high-pressure Bridgman Cd1−xZnxTeNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996
- Uniformity of Cd1 − xZnxTe grown by high-pressure BridgmanNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996
- Recent progress in Cd1−xZnxTe radiation detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996
- Deep center luminescence in p-type CdTeJournal of Applied Physics, 1996
- Properties of CdZnTe crystals grown by a high pressure Bridgman methodJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Photoluminescence studies in ZnxCd1−xTe single crystalsJournal of Vacuum Science & Technology A, 1990
- Photoconductive characterization of ZnxCd1−xTe (0≤x≤0.25) single crystal alloysJournal of Vacuum Science & Technology A, 1990
- Edge and Donor-Acceptor Pair Emissions in Cadmium TellurideJapanese Journal of Applied Physics, 1973