Channeling inV3Si: Atomic Displacements and Electron-Phonon/Defect Interactions

${}_{}{}^4{}_{}{}^{}\mathrm{He}$ channeling measurements of minimum yields in single-crystal ${\mathrm{V}}_3$Si have been compared with those calculated with the Karlsruhe phonon density of states. Atomic displacements versus temperature and defect level have been so obtained. In situ radiation-damaged crystals show ∼ ${10}^{-1\mathrm{}}$-Å displacements and significant phonon stiffening. The observations explain the large changes in electrical resistivity in the defect state, and suggest that both thermal and static (defect) displacements diminish the electron-phonon/defect interactions, and to equivalent degrees.