Analysis of insulated gate transistor turn-off characteristics
- 1 February 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (2) , 74-77
- https://doi.org/10.1109/EDL.1985.26048
Abstract
A model based upon a MOSFET driving a wide-base p-n-p transistor is presented for analysis of the turn-off behavior of n-channel insulated gate transistors. This model is found to provide a very good quantitative explanation of the shape of the collector current waveform during turn-off. Verification was accomplished using insulated gate transistors (IGT's) fabricated with two voltage ratings and a variety of radiation doses. This analysis allows the separation of the channel (electron) and minority carrier (hole) current flow in the IGT for the first time.Keywords
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