Doped amorphous silicon and its application in photovoltaic devices
- 1 January 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Journal on Solidstate and Electron Devices
- Vol. 2 (3S) , S3-S6
- https://doi.org/10.1049/ij-ssed.1978.0019
Abstract
The paper deals with the development of the new field of substitutionally doped amorphous semiconductors, and discusses the possible application of amorphous silicon in cheap large-area photovoltaic devices. Preparation and doping from the gas phase are described and the properties of an amorphous junction are discussed.Keywords
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