Coulomb blockade and electrical field effect in nanoscale granular microbridges

Publisher Website
Google Scholar
Abstract
Nanoscale microbridges made of NbN granular thin films were fabricated by the edge-defined process. The diameter of NbN grains is ∼8 nm, and the size of the microbridges is ∼50 nm in width and ∼200 nm in length. We have observed a clear Coulomb blockage at 4.2 K in current–voltage characteristics. In order to investigate electrical field effects, a gate electric field was applied to the microbridge. We observed periodic conductance modulations with the gate voltage period of 15–20 V, from which the gate-grain capacitance is estimated to be 0.01 aF. The experimental results agree with numerical simulation based on the model of a two-dimensional array of single-electron-tunneling junctions.

This publication has 0 references indexed in Scilit: