III-V compound review
- 1 June 1971
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 9 (3) , 235-242
- https://doi.org/10.1080/00337577108231053
Abstract
Radiation effects in InSb, GaSb, and GaAs are reviewed with emphasis on damage production and comparison of recovery results. The orientation dependence of damage production at electron energies near threshold, the rather low values of the threshold displacement energy and subthreshold damage effects are discussed. Consideration is given to a number of similarities in the recovery data for InSb and GaSb, and some differences between these materials and GaAs are discussed.Keywords
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