-assisted molecular-beam epitaxy of and thin films on MgO(100)
- 15 October 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 60 (15) , 11193-11206
- https://doi.org/10.1103/physrevb.60.11193
Abstract
We report on the molecular beam epitaxial growth of single-crystalline, stoichiometric and films on MgO(100), using as the oxidizing agent. Mössbauer spectroscopy on probe layers is used to determine accurately the stoichiometry of the films. It is found that also all intermediate nonstoichiometric phases can be obtained. The formation of the metastable compound clearly demonstrates the large oxidizing power of Although the shape anisotropy dictates that the zero-field magnetization direction should lie entirely in the plane of the film, this is never observed. Stoichiometric has large out-of-plane components and only in the case of highly oxidized does the magnetization approach the film plane. Upon further oxidation to stoichiometric however, it rotates back, and finally becomes almost completely perpendicular to the plane of the film. Furthermore, in the case of (near-) stoichiometric the magnetizations of the A and B sublattices are not completely coupled antiparallel. On average, the magnetization of the B site ions is closer to the film plane than the magnetization of the A site ions. All the as-grown films exhibit a surface reconstruction, independent of the stoichiometry. Using simple electrostatic considerations, we propose three possible surface terminations: a half-filled A layer, a B layer with oxygen vacancies and a B layer with hydroxyl groups. Upon annealing, the reconstruction irreversibly transforms to a reconstruction, caused by Mg outdiffusion from the substrate. Strong reflection high-energy electron diffraction intensity oscillations give direct, unambiguous evidence that has a two-dimensional layer-by-layer growth mode over the entire temperature range studied, i.e., from 273 to 723 K, guaranteeing atomically flat surfaces and interfaces in multilayer structures. The largest oscillations are obtained on ex situ cleaved, UHV-annealed MgO(100) substrates, or on in situ annealed films. Deposition above is accompanied by rapid Mg outdiffusion.
Keywords
This publication has 53 references indexed in Scilit:
- Surface structure and morphology of Mg-segregated epitaxialthin films on MgO(001)Physical Review B, 1997
- Reflection High Energy Electron Diffraction Intensity Oscillations in Fe3O4/MgO Superlattices Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1997
- Composition of MBE-grown iron oxide filmsJournal of Crystal Growth, 1997
- Structure and contrast in scanning tunneling microscopy of oxides: FeO monolayer on Pt(111)Physical Review B, 1996
- Anomalous moment and anisotropy behavior infilmsPhysical Review B, 1996
- Surface evolution during molecular-beam epitaxy deposition of GaAsPhysical Review Letters, 1992
- Topographic and Magnetic-Sensitive Scanning Tunneling Microscope Study of MagnetiteScience, 1992
- Preparation and characterization of (111)-oriented Fe3O4 films deposited on sapphireJournal of Applied Physics, 1989
- Magnetic dipolar and electric quadrupolar effects on the M ssbauer spectra of magnetite above the Verwey transitionHyperfine Interactions, 1977
- Study of the Low-Temperature Transition in Magnetite and the Internal Fields Acting on Iron Nuclei in Some Spinel Ferrites, Using Mössbauer AbsorptionPhysical Review B, 1961