Active phase shifters at X band using GaAs MESFETs
- 1 January 1981
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. XXIV, 140-141
- https://doi.org/10.1109/isscc.1981.1156200
Abstract
This report will describe a X-band active phase shifter with 140° continuous phase variation and associated gain of 30dB. The circuit consists of pre-and post-amplifying FETs, connected with a dual-gate FET as a phase-shifting element. Noise figure is better than 4.9dB at 12GHz.Keywords
This publication has 1 reference indexed in Scilit:
- Dual gate GaAs m.e.s.f.e.t. phase shifter with gain at 12 GHzElectronics Letters, 1980