Hydrogenation of electron traps in bulk GaAs and GaP
- 24 November 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (24) , 1052-1053
- https://doi.org/10.1049/el:19830714
Abstract
The effect of hydrogenation on a variety of electrically active defects in bulk single-crystal GaAs and GaP has been observed using transient capacitance spectroscopy. Approximately half the different defect states in these materials were neutralised by hydrogen incorporation. The efficiency of neutralisation was slightly more pronounced for defects in GaAs compared to those in GaP.Keywords
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