Long-Range Migration of Self-Interstitial Atoms in Tungsten
- 29 December 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 35 (26) , 1773-1775
- https://doi.org/10.1103/physrevlett.35.1773
Abstract
Resistivity annealing following irradiation with 3-MeV electrons at 4.5 K has been investigated on tungsten single crystals. High-purity samples showed a recovery stage between 24 and 30 K, which apparently shifts with increasing dose to lower temperatures. We conclude that it is associated with long-range migration of self-interstitial atoms with a migration energy of 54 ± 5 meV. The relationship to recent conclusions of other authors is discussed.Keywords
This publication has 8 references indexed in Scilit:
- Comment on "Free Migration of Interstitials in Tungsten"Physical Review Letters, 1975
- Free Migration of Interstitials in TungstenPhysical Review Letters, 1975
- Untersuchungen an abgeschrecktem und elektronenbestrahltem WolframPhysica Status Solidi (b), 1971
- An in situ field ion microscope study of irradiated tungstenPhilosophical Magazine, 1971
- On the heating of a field ion microscope specimenPhilosophical Magazine, 1971
- Mechanical aftereffect as a tool for studying point defects in crystalsPhysics Letters A, 1969
- Stage-I Interstitials in Electron-Irradiated TungstenPhysical Review B, 1969
- Moving Dislocations and Solute AtomsPhysical Review B, 1956