Formation of titanium silicide films by rapid thermal processing

1 October 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 4 (10) , 380-382
https://doi.org/10.1109/edl.1983.25771

Abstract

Titanium silicide thin films, sputter deposited from a composite silicide target, have been rapidly sintered in ∼10 s to produce extremely uniform highly conductive layers (≲ Ω/sq \plusmn; 1 percent over a 4-in wafer) with film stress comparable to furnace-annealed films. Such films are suitable for VLSI applications. In addition, silicide formation and activation of ion-implanted species in adjacent Si regions can be accomplished in the same rapid processing step without significant dopant redistribution.

Keywords

TITANIUM
SILICIDES
RAPID THERMAL PROCESSING
RAPID THERMAL ANNEALING
OPTICAL FILMS
CONDUCTIVE FILMS
VERY LARGE SCALE INTEGRATION
ELECTRODES
CONDUCTIVITY
GRAIN SIZE