Effects of capacitance at crossover wirings in power GaAs m.e.s.f.e.t.s.
- 22 May 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (11) , 417-418
- https://doi.org/10.1049/el:19800291
Abstract
Power GaAs f.e.t.s. with an air-bridge crossover were compared with those of SiO2 crossover to find the effect of the capacitance at the crossover points. The capacitance of SiO2 crossover points is much smaller than that of the gate pad or the gate busbar in power GaAs f.e.t.s, and deterioration of the microwave performance due to that capacitance is negligible.Keywords
This publication has 1 reference indexed in Scilit:
- Estimation of fringing capacitance of electrodes on s.i. GaAs substrateElectronics Letters, 1980