Transmission electron microscopy study of CdTe(111) grown on GaAs(100) by molecular-beam epitaxy
- 1 May 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (9) , 4114-4117
- https://doi.org/10.1063/1.344971
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100)Applied Physics Letters, 1988
- CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterizationSurface Science, 1986
- Elimination of dark line defects in lattice-mismatched epilayers through use of strained-layer superlatticesApplied Physics Letters, 1985
- High resolution electron microscope study of epitaxial CdTe-GaAs interfacesApplied Physics Letters, 1985
- OPTICAL IMAGING OF DISLOCATIONS IN STRAINED—LAYER SUPERLATTICES AND LATTICE—MISMATCHED EPILAYERSMRS Proceedings, 1985