A model of hole trapping in SiO2 films on silicon
- 15 May 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (10) , 6822-6824
- https://doi.org/10.1063/1.365438
Abstract
We demonstrate that hole trap densities and hole trapping in SiO2 films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers.This publication has 9 references indexed in Scilit:
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