Some Applications of Cold Crucible Technology for Silicon Photovoltaic Material Preparation

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Abstract
Cold crucible melt confinement was used for four different silicon crystallization methods of interest in photovoltaic material preparation: directional solidification, Czochralski pulling, sheet growth, and continuous ingot casting. Large grained, multicrystalline ingots were directionally solidified in cold crucibles, and grain sizes up to 5 mm were observed. Dislocation‐free crystals were pulled in [111] and [100] orientations, using semiconductor‐grade silicon. The edge‐supported pulling (ESP) growth method was employed for sheet growth. The sheets were solidified between quartz filaments. Continuous casting of square cross‐sectional ingots with grain sizes of up to several millimeters was carried out. Material suitable for fabrication into solar cells was obtained by these methods. AM1 solar cell IV characteristics are presented for the different materials and for coprocessed cells made from conventional Czochralski crystals grown using quartz crucibles. Some purity and electrical property data for cold crucible crystals are also given. Dislocation‐free cold crucible crystals had higher purity levels and photovoltaic conversion efficiencies than conventional Czochralski crystals.

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