Pressure controlled VPE growth of quaternary Hg1−x−yCdxMnyTe epitaxial layers
- 1 January 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 3 (1) , 119-123
- https://doi.org/10.1116/1.573181
Abstract
Quaternary Hg1−x−yCdxMnyTe epitaxial layers were grown on Cd1−xMnxTe substrates by pressure controlled isothermal vapor phase epitaxy employing a two-zone configuration system. The interdiffusion of Cd and Mn from the solid was investigated. The optimum growth conditions (i.e., the highest growth rate and the best electronic properties) were determined. Desired values of x and y were obtained by varying the growth temperature T0, mercury pressure pHg, and substrate composition.Keywords
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