An 80ns 1Mb ROM

1 January 1984

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. XXVII, 146-147
https://doi.org/10.1109/isscc.1984.1156660

Abstract

This paper will describe a 1Mb programmable ROM incorporating a through-hole programmed mask ROM cell and a CMOS fully static sense amp. The ROM has been fabricated using a double poly-Si P-well CMOS technology, achieving a cell size of 33μm ² .

Keywords

READ ONLY MEMORY
CMOS TECHNOLOGY
CURRENT SUPPLIES
EMERGENCY POWER SUPPLIES
NEGATIVE FEEDBACK
ELECTRONICS PACKAGING

This publication has 1 reference indexed in Scilit:

A 1Mb ROM with on chip ECC for yield enhancement
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1983