Inter-sub-band absorption in InP/In0.53Ga0.47As multiple quantum wells
- 1 June 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (6) , 586-589
- https://doi.org/10.1088/0268-1242/3/6/012
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Modulation-doped multiquantum wells in InP/In0.53Ga0.47As grown by atmospheric pressure metalorganic chemical vapor depositionApplied Physics Letters, 1987
- InGaAs-InP multiple quantum wells grown by atmospheric pressure metalorganic chemical vapor depositionApplied Physics Letters, 1987
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- Observation of Stark shifts in quantum well intersubband transitionsApplied Physics Letters, 1987
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguidesApplied Physics Letters, 1987
- Novel optical modulators and bistable devices using the self-electro-optic effect in semiconductor quantum wellsSurface Science, 1986
- Investigation of InGaAs-InP quantum wells by optical spectroscopySemiconductor Science and Technology, 1986
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- On the absorption of infrared radiation by electrons in semiconductor inversion layersSolid State Communications, 1976
- The interface EM modes of a “surface quantized” plasma layer on a semiconductor surfaceSurface Science, 1976