Comment on “Assignment of the Raman active vibration modes of β-Si3N4 using micro-Raman scattering” [J. Appl. Phys. 85, 7380 (1999)]
- 15 January 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (2) , 958-959
- https://doi.org/10.1063/1.371969
Abstract
In this comment to a recent experimental paper by Honda et al. [J. Appl. Phys. 85, 7380 (1999)], we report first-principles calculations of phonon modes of β-Si3N4, which theoretically confirm the experimental micro-Raman assignments. In addition, the theory is able to locate the “missing” Ag mode, and we show that this mode is a bond-stretching mode. Hence, it is not in the low-frequency band as previously believed, but rather at intermediate frequency. We discuss the possible reasons this mode is “missing” in the spectra, and show that the application of high pressure will separate this mode from others.This publication has 5 references indexed in Scilit:
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