Status Of The Production Use Of Ion Implantation For IC Manufacture And Requirements For Competitive Application Of Focused Ion Beams

7 November 1983

conference paper
Published by SPIE-Intl Soc Optical Eng

Vol. 393, 177-191
https://doi.org/10.1117/12.935109

Abstract

An outline is given of the range of applications and limitations of "broad beam" implantation techniques for LSI and VLSI device fabrication. Some of these limitations include dose uniformity and accuracy, resist stability and erosion, wafer heating effects during implantation, surface contamination and charging effects. The impact of these and other issues on the fabrication of fine feature (less than 0.5 micron) devices, including a comparison of the application of focused ion beams for direct implantation is discussed.© (1983) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Keywords

This publication has 0 references indexed in Scilit: