Diffusion of tellurium dopant in silicon

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Abstract
The diffusion of tellurium in silicon has been investigated by means of secondary ion mass spectrometry. In the temperature interval between 900 and 1250 °C the diffusion coefficient has been found to range from ∼2×10−15 to 6×10−12 cm2/s, i.e., several orders of magnitude lower than the diffusion coefficients of the other chalcogens S and Se. In units of cm2/s and eV, the results may be expressed as DTe=0.50 exp(−3.34/kT), suggestive of a predominantly substitutional mechanism of diffusion.

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