Leakage-current-induced hot-carrier degradation of p-channel MOSFETs
- 1 November 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (11) , 573-575
- https://doi.org/10.1109/55.9280
Abstract
Leakage-current-induced hot-carrier effects have been observed during stressing of p-channel MOSFETs in the OFF state with V/sub GS/>0 V and V/sub DS/<0 V. This mode of stressing results in increased leakage current and a positive shift in the value of V/sub GS/, corresponding to the onset of avalanche breakdown of the drain junction. These effects are related to generation of interface states near the drain in forward-mode operation. By comparison, conventional stressing in the ON state with V/sub GS/<0 V and V/sub DS/<0 V resulted in little change in these p-channel MOSFET characteristics.Keywords
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