Oscillations in the surface structure of Sn-doped GaAs during growth by MBE
- 1 February 1981
- journal article
- Published by Elsevier in Surface Science
- Vol. 103 (1) , L90-L96
- https://doi.org/10.1016/0039-6028(81)90091-1
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1980
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- Self-masking selective epitaxy by molecular-beam methodJournal of Applied Physics, 1977