New starting materials for MOMBE
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 1021-1029
- https://doi.org/10.1016/0022-0248(91)90596-w
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Alternative group V precursors for CVD applicationsJournal of Crystal Growth, 1991
- MOCVD of AlGaAs/GaAs with novel group III compoundsJournal of Electronic Materials, 1990
- Residual impurities in epitaxial layers grown by MOVPEJournal of Crystal Growth, 1988
- The use of organic As precursors in the low pressure MOCVD of GaAsJournal of Crystal Growth, 1988
- Chemical beam epitaxial growth of high-purity GaAs using triethylgallium and arsineApplied Physics Letters, 1987
- Growth of high-quality GaxIn1−xAsyP1−y by chemical beam epitaxyApplied Physics Letters, 1987
- A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAsJournal of Crystal Growth, 1986
- GaAs growth in metal–organic MBEJournal of Vacuum Science & Technology B, 1985
- A PH3 cracking furnace for molecular beam epitaxyJournal of Vacuum Science & Technology A, 1983
- On the use of AsH3 in the molecular beam epitaxial growth of GaAsApplied Physics Letters, 1981