Electrical characteristics of GaAsP Schottky barrier diodes
- 31 December 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (12) , 1319-1323
- https://doi.org/10.1016/0038-1101(71)90121-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Properties of GaP Schottky barrier diodes at elevated temperaturesSolid-State Electronics, 1969
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965
- Gallium Phosphide-Gold Surface BarrierJournal of Applied Physics, 1964
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963