A low-noise GaAs MESFET made with graded-channel doping profiles
- 1 March 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (3) , 85-87
- https://doi.org/10.1109/EDL.1984.25840
Abstract
We have demonstrated that devices fabricated from epitaxially grown material with a graded-channel doping profile are capable of improved microwave performance. For operation at 12 GHz, graded-channel doping profile devices have an associated gain that is always 1 dB higher at the minimum noise-figure point compared to ion-implanted Gaussian-channel doping profile devices. A noise figure of 1.60 dB with 11-dB associated gain has been obtained at 12 GHz for 0.5-µm × 300-µm gate devices. A tranconductance of 200 mS/mm for this device has been achieved.Keywords
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