Bond length relaxation in ultrathin GaxIn1−xP and InPxAs1−x layers on InP(100)
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 60-61, 529-533
- https://doi.org/10.1016/0169-4332(92)90471-9
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- OMVPE growth of GaInAs/InP and GaInAs/GaInAsP quantum wellsJournal of Crystal Growth, 1991
- Local structure around Ga and As doped in InP studied by fluorescence-detected EXAFSSolid State Communications, 1988
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Fluorescence-Detected X-Ray Absorption Spectroscopy Applied to Structural Characterization of Very Thin Films; Ion-Beam-Induced Modification of Thin Ni Layers on Si(100)Japanese Journal of Applied Physics, 1985
- Extended x-ray-absorption fine-structure study ofrandom solid solutionsPhysical Review B, 1983
- Ab initio calculations of amplitude and phase functions for extended x-ray absorption fine structure spectroscopyJournal of the American Chemical Society, 1979
- Fluorescence detection of exafs: Sensitivity enhancement for dilute species and thin filmsSolid State Communications, 1977
- Theory of the extended x-ray-absorption fine structurePhysical Review B, 1974
- New Technique for Investigating Noncrystalline Structures: Fourier Analysis of the Extended X-Ray—Absorption Fine StructurePhysical Review Letters, 1971
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970