The Effect of Processing Environment on the Lateral Growth of Titanium Silicide

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Abstract
The purity of the process atmosphere used in the annealing cycles of titanium silicide formation is a very important consideration in the self‐aligned silicide process. The two important problems of oxidation of titanium and lateral growth of titanium silicide are addressed by using nitriding atmospheres containing low levels of oxygen and water. In this work, the lateral growth of titanium silicide in ammonia + nitrogen, nitrogen and argon process atmospheres was investigated. It was observed that ppm levels of oxygen or water in the process environment can cause an unacceptable amount of oxidation of the titanium film. Some comments on the mechanism of lateral growth containment are also included.

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