First-principles investigation of radiation induced defects in Si and SiC
- 1 May 1998
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 141 (1-4) , 61-65
- https://doi.org/10.1016/s0168-583x(98)00082-2
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Materials Performance in a Radiation EnvironmentMRS Bulletin, 1997
- Highly optimized tight-binding model of siliconPhysical Review B, 1997
- Ab initio pseudopotential calculations of point defects and boron impurity in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Electronic structure approach for complex silicasPhysical Review B, 1995
- The threshold energy for defect production in SiC: a molecular dynamics studyJournal of Nuclear Materials, 1994
- Molecular dynamics simulations of bulk displacement threshold energies in SiRadiation Effects and Defects in Solids, 1994
- First-principles calculations of self-diffusion constants in siliconPhysical Review Letters, 1993
- Molecular dynamics study of the displacement threshold surfaces and the stability of Frenkel pairs in β-SiCJournal of Nuclear Materials, 1992
- Empirical interatomic potential for silicon with improved elastic propertiesPhysical Review B, 1988
- SiC matrix/SiC fiber composite: A high-heat flux, low activation, structural materialJournal of Nuclear Materials, 1986