Photoreflectance Spectra from GaAs Buffer Layer of GaAs/AlAs Multiple Quantum Well/GaAs Buffer/GaAs Substrate
- 1 July 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (7R)
- https://doi.org/10.1143/jjap.30.1367
Abstract
We have measured photoreflectance spectra from a GaAs buffer of a GaAs/AlAs multiple quantum well (MQW)/GaAs buffer/GaAs substrate. In order to interpret our experimental results, we have tried to modify Aspnes's low field limit theory for electroreflectance. From this treatment, the built-in electric field at the interface between the MQW layer and the GaAs buffer layer is estimated to be 35 kV/cm. It has been shown that PR spectra at various points on the sample surface resolve the question on the homogeneity of the MQW layer thickness.Keywords
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