SiFx and SFx molecular ion implantations into GaAs
- 9 November 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (19) , 1503-1505
- https://doi.org/10.1063/1.98616
Abstract
We have investigated fundamental electrical characteristics of GaAs implanted with SiFx and SFx (x=1, 2, and 3) molecular ions at energies which give the same dopant atom (Si or S) ion ranges. Three kinds of annealing methods were compared. Characterization of these implanted GaAs layers was carried out by the Hall effect, capacitance‐voltage, and secondary ion mass spectrometry measurements.Keywords
This publication has 0 references indexed in Scilit: