Diffusion of As, P, and B from Doped Polysilicon through Thin SiO2 Films into Si Substrates

Publisher Website
Google Scholar
Abstract
Diffusion characteristics of As, P, and B in films as thin as 35 Å have been studied using doped structure samples. A two‐boundary model can well characterize the As and P diffusion and low concentration diffusion, where the derived diffusion coefficients and segregation coefficients are given by , , , , , . For diffusion of high concentrations, anomalous enhancement of diffusion has been observed at long diffusion times , and thin film thickness. Based on the change of bond characteristics in observed by SIMS and ESCA, the enhancement has been explained by assuming that the changed layer with a high diffusion coefficient grows in with a thickness , where the rate constant is given typically by for a concentration in polysilicon.

This publication has 0 references indexed in Scilit: