Broad-Band Internal Matching of Microwave Power GaAs MESFET's
- 1 January 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 27 (1) , 3-8
- https://doi.org/10.1109/tmtt.1979.1129549
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- A New Load-Pull Characterization Method for Microwave Power TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Internally matched microwave broadband linear power FETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Circuit device interface techniques for a 5-W 5-GHz bipolar microwave power transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Broad-Band Medium-Power Amplification in the 2-12.4-GHz Range with GaAs MESFET'sIEEE Transactions on Microwave Theory and Techniques, 1976
- Capacitors for Microwave ApplicationsIEEE Transactions on Parts, Hybrids, and Packaging, 1976
- Tables of Chebyshev impedance–transforming networks of low-pass filter formProceedings of the IEEE, 1964