Dielectric Strength of Thin Oxide Grown Thermally Using Thin Amorphous Silicon

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Abstract
The dielectric strength of thin (16 nm) thermal oxide grown using thin amorphous Si is investigated in terms of preoxidation annealing, oxidation, and postoxidation annealing temperatures. Even when the gate area is large (25 mm2), many metal oxide semiconductor capacitors provided histograms of oxide dielectric strength displaying narrow distributions. Preoxidation annealing at temperatures above 950°C drastically reduces the dielectric breakdown to nearly 0 MV/cm. The dielectric strength increases or decreases according to the postoxidation annealing temperature, suggesting that this change in dielectric strength is associated with a reversible mechanism. The implantation of ions straight through defective oxide layers clearly improves dielectric strength from 0 to about 3 MV/cm, implying that an oxide defect has a definite structure, which is destroyed during ion implantation when the constituent atoms are randomly displaced.

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