On the Origin of Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes
- 24 March 2005
- journal article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry B
- Vol. 109 (15) , 6968-6971
- https://doi.org/10.1021/jp050868h
Abstract
A correlation is observed between the diameters (d) of single-walled carbon nanotubes and the percentages of metallic and semiconducting tubes synthesized at 600 °C by plasma-assisted chemical vapor deposition. Small tubes (d ≈ 1.1 nm) show semiconductor percentages that are much higher than expected for a random chirality distribution. Density functional theory calculations reveal differences in the heat of formation energies for similar-diameter metallic, quasi-metallic, and semiconducting nanotubes. Semiconducting tubes exhibit the lowest energies and the stabilization scales with ∼1/d2. This could be a thermodynamic factor in the preferential growth of small semiconducting nanotubes.Keywords
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