In-situ deposition of PZT thin films by RF magnetron sputtering
- 1 February 1995
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 7 (1-4) , 185-193
- https://doi.org/10.1080/10584589508220231
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitorsApplied Physics Letters, 1993
- Pzt Thin Films on a Lead Titanate Interlayer Prepared by rf Magnetron SputeringMRS Proceedings, 1993
- Ferroelectric memoriesFerroelectrics, 1992
- Ferroelectric PbZr0.2Ti0.8O3 thin films on epitaxial Y-Ba-Cu-OApplied Physics Letters, 1991
- Preparation and Switching Kinetics of Pb(Zr, Ti)O3 Thin Films Deposited by Reactive SputteringJapanese Journal of Applied Physics, 1991
- Processing and characterization of sol-gel derived very thin film ferroelectric capacitorsFerroelectrics, 1991
- Pulsed laser deposition of oriented PbZr.54Ti.46O3Ferroelectrics, 1991
- The high road toward an excellent nonvolatile memoryFerroelectrics, 1991
- Process optimization and characterization of device worthy sol-gel based PZT for ferroelectric memoriesFerroelectrics, 1990
- Ferroelectric memoriesFerroelectrics, 1990