Short Wavelength Response in a-Si:H p-i-n Diodes: A Simple Method to Minimize Interface Recombination
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Local bonding arrangements of boron in doped hydrogenated amorphous siliconJournal of Applied Physics, 1984
- Hot carrier effects in the collection efficiency of solar cells: a-Si:HApplied Physics Letters, 1982
- Molecular hydrogen in-Si: HPhysical Review B, 1982
- Collection efficiency of low-mobility solar cellsApplied Physics Letters, 1981
- Characterization of amorphous semiconducting silicon-boron alloys prepared by plasma decompositionPhysical Review B, 1979
- Amorphous silicon solar cellApplied Physics Letters, 1976